Prof. Tianzhi Luo,University of Science and Technology of China,China
Title：Preparation of electromagnetically conductive high-toughness hydrogels and their potential applications
Abstact：In recent years, hydrogels have received extensive attention from scholars as a soft substance. Its excellent tensile properties, fatigue resistance, and good biocompatibility make it a potential application in flexible electronics, biosensing, wound healing, and other fields. In this paper, a double-network hydrogel with good conductivity and magnetism was prepared based on polyacrylamide and chitosan, and the effects of components on its mechanical properties and conductivity were systematically studied, the toughening mechanism was analyzed, the mechanism of its microstructure change on the mechanical properties at different temperatures was clarified, and its application prospects in flexible electronic devices and tumor hyperthermia were verified.
BIOGRAPHY：Prof. Luo obtained his Ph.D from the Department of Materials Science and Engineering at Johns Hopkins University in 2007. He worked on cell mechanics as a Postdoc Fellow in the School of Medicine at Johns Hopkins University from 2008-2014. Since 2016, He has joined the faculty of University of Science and Technology of China where he has been working on the multiscale biomechanics, biomaterials and high-performance advanced materials. He has published more than 60 research papers in top journals, such as Nature Materials. His scientific findings were remarked in major media by world-known scientists. Moreover, he holds more than 20 patents. Over the past few years, he has been granted with several competitive funding from the Natural Science Foundation of China and Chinese Academy of Scienceetc. Additionally, he has been awarded with a number of distinguished honors and awards.
简介：2007年博士毕业于约翰霍普金斯大学材料科学与工程系。2008-2014在美国约翰霍普金斯大学医学院从事生物力学博士后工作。2016年起在中国科学技术大学任教授。研究方向包括：1）多尺度生物力学; 2）生物材料和医疗器械; 3）高性能先进材料。以通讯作者在Nature Materials等顶级刊物发表SCI论文60余篇，成果被国际著名专家在Nature Materials单独撰文报道。获批国内外专利20余项。近年来主持军委后勤保障部重点项目、国家自然科学基金面上项目、安徽省科技重大专项等课题。曾入选“国家级海外高层次创新人才（青年项目）”等人才计划。荣获中国发明协会“发明创业二等奖”等荣誉。
Prof. Shengjun Zhou ,Wuhan University,China
Title：Boosting quantum efficiency of GaN-based light-emitting diodes
Abstract：III-nitride light-emitting diodes (LEDs) have attracted considerable interest for applications in automotive front lighting, high-resolution full color displays, and visible light communication. However, the internal quantum efficiency of GaN-based LEDs is limited by high threading dislocation density in GaN film due to the lattice mismatch and difference in thermal expansion coefficients between the GaN and the substrate. In addition, the light extraction efficiency of GaN-based LEDs is relatively low due to total internal reflection of light at the GaN-air interface. We will outline the recent advances in improving crystalline quality and light extraction efficiency of III-nitride blue/green/ultraviolet LEDs. Recent work in our research group, including sputtered AlN nucleation layer, ultrathin tunneling junction, hybrid nucleation layer, patterned substrate with silica array (PSSA), pre-well structure, staggered quantum wells, V-shaped pits, sidewalls nano-prism, thermally stable Ag mirror, and full-angle distributed Bragg reflector (DBR), will be discussed in this talk. We show that the sputtered AlN nucleation layer can enhancec-plane growth and suppress growth of GaN on cone region of PSS, which can effectively eliminate the undesirable GaN islands on the inclined sidewall of PSS and thus suppress the generation of TDs from coalescence of GaN islands. We find that the V-pit potential barrier height depends on the V-pit diameter, which plays an important role in determining the quantum efficiency, forward voltage and efficiency droop of green LEDs. We demonstrate efficient InGaN-based yellow (570 nm) LEDs with optimized three-layer staggered quantum wells (QWs) that are grown on patterned sapphire substrates. We observed a reduced threading dislocation density in the films grown on PSSA, attributing to the preferable vertical growth mode and reduced misfit at the coalescence boundary. Furthermore, a significant enhancement in light extraction efficiency can be achieved from InGaN/AlGaN-based ultraviolet LEDs built on PSSA owing to the large refractive index contrast between the epilayers and PSSA. We show that it is possible to improve both the light extraction efficiency and current spreading of flip-chip LED by incorporating a highly reflective metallic reflector made from Ag. Moreover, mini/micro-LEDs for high-definition displays will be introduced.
BIOGRAPHY：Shengjun Zhou received the Ph.D. degree from Shanghai Jiao Tong University, Shanghai, China, in 2011. He is a Professor at Wuhan University. His current research interests lie in the areas of GaN-based LEDs, photonics and semiconductors, nanoimprint lithography and direct laser writing with applications in electronic and photonic devices. He is well known as an industrial technologist. Prior to joining Wuhan University, he was a CTO at Quantum Wafer Inc. from 2011 to 2014, focusing on the development of high brightness GaN-based LEDs. He was a research fellow at University of Michigan, Ann Arbor, from 2014 to 2015. He received many academic awards including the National Youth Talent Support Program, IAAM Scientist Medal, Fellow of IAAM, Fellow of VEBLEO, IOP Publishing Outstanding Reviewer Award, IOP Publishing CHINA TOP CITED PAPER AWARD, distinguished Young Scholar of Hubei province, and Chutian Scholar of Hubei province. He has published more than 92 papers and holds over 36 patents. He is Co-chair of the Organizing Committee for IEEE ICEPT 2016 conference. He served as committee member for many conferences.
简介：周圣军，武汉大学教授、博士生导师，入选国家级高层次人才（青年），湖北省杰青、楚天学者。长期从事Mini/Micro-LED外延生长与芯片制造技术研究工作，承担国家及省部级课题10余项。在Laser & Photonics Reviews、Nano Energy、Nanoscale、Applied Surface Science、Applied Physics Letters、Optics Express、Optics Letters、Journal of Applied Physics、IEEE Transactions on Electron Devices等期刊发表第一或通讯作者SCI论文92篇，ESI高被引论文5篇，主编学术专著2部（科学出版社和Springer出版社），获授权国家发明专利36件，研究成果被国际著名半导体行业媒体《Semiconductor Today》和《Compound Semiconductor》专栏报道23次。周圣军教授获中国产学研合作创新奖（个人），IAAM Scientist Medal，Fellow of VEBLEO，英国物理学会出版社CHINA TOP CITED PAPER AWARD，英国物理学会出版社'Outstanding Reviewer' Award和第六十届IEEE Electronic Components and Technology Conference 杰出贡献奖。担任第十七届ICEPT国际学术会议组织委员会共同主席，江西省化合物半导体光电器件工程研究中心专家委员会主任和《光子学报》第一届青年编委。
Dr. Hsu-Sheng Tsai, Harbin Institute of Technology
Title：Plasma and ion beam technology is used in the preparation of thin film materials
Abstract：Firstly, graphene thin film materials are prepared by plasma technology, which effectively produces large-scale and transfer-free graphene thin films on silicon carbide wafers in a low-vacuum process. In the annealing process after nitrogen plasma treatment of silicon carbide, nitrogen and silicon preferentially react spontaneously to form silicon nitride, and at the same time, carbon atoms will be extruded and condensed to the surface to form a graphene film. Subsequently, plasma and ion beam technology will be used for the preparation of a series of graphene-like, transition metal chalcogenide, and transition metal nitride thin film materials.
BIOGRAPHY：Hsu-Sheng Tsai received his Ph.D. degree at National Tsing Hua University in 2015 and was a guest scientist at Helmholtz-Zentrum Dresden-Rossendorf (HZDR) in 2018-2019. He has obtained the Humboldt Research Fellowship (Alexander von Humboldt Foundation, Germany) in 2018. Since 2019, he is a full professor in the Laboratory for Space Environment and Physical Sciences, Harbin Institute of Technology, China. He has 42 SCI publications with a total citation over 800 (H-index: 15). His research interests include plasma surface treatment, ion beam modification of materials, ion batteries, synthesis and applications of 2D materials.
简介：本人累计共发表45篇SCI论文（第一或通讯作者23篇），H因子为15，已获得授权美国及台湾发明专利各1项，主持项目经费累计约200万。论文引用次数最高前五名皆为本人第一作者之文章，其中收获许多顶尖期刊文章的引用（Nat. Commun., npj Quantum Mater., NPG Asia Mater., Chem. Soc. Rev., Chem. Rev., Adv. Mater., Nano Today）。单篇最高引用次数为223。于2018年获奖德国洪堡学者荣誉(台湾地区平均一年1-2人获奖)，国际肯定研究成果与专业能力。个人长期致力于等离子体及离子束技术制备二维材料并研究其材料物理性质，此制备技术为个人率先开发并应用于多种二维材料制备，目前正主要开展以离子束辅助制作新型二维材料晶体管器件，探讨器件中各种物理问题，借此了解其如何影响器件性能，并尝试克服以达成器件性能的提升。
Title：The role and influence of rare earth elements in the modification of heavy rail steel inclusions
Abstract：Heavy gauge steel is often used in railroad tracks to provide a stable travel path for trains. Therefore, heavy gauge steel not only needs to be strong enough to withstand the weight of trains, but also needs to have good wear and corrosion resistance. Inclusions have a significant impact on their properties. For example, oxides and sulfides in steel are the main causes of internal damage and fatigue damage in heavy gauge steel. Therefore, controlling and improving these inclusions is the key to improving the performance of heavy gauge steel. Rare earth elements, due to their special physicochemical properties, can significantly change the type and distribution of inclusions in steel when added to steel. After the addition of rare earths, the morphology of inclusions will change significantly, from the original ellipsoidal and fusiform to nearly spherical. In addition, the original presence of MnS, Al2O3 and some other inclusions will be replaced by rare earth sulfides and rare earth sulfur oxides. In this paper, a first-principles calculation method based on density-functional theory is used to calculate the sequential formation order of inclusions, and the modification of the elastic properties of inclusions and the various anisotropies of the elastic properties by the rare-earth element La is investigated from a microscopic point of view. The corrosion resistance of the inclusions before and after modification is characterized by using the intrinsic potential difference. The La2O2S and LaAlO3 modified by La are closer to the average elastic modulus of the steel matrix, with less anisotropy and reduced stress concentration. The modified cerium aluminate also has better corrosion resistance. This is one of the reasons for the improved fatigue properties of the steel after doping with rare earths.
BIOGRAPHY：Lei Ren, Ph.D. He is a associate professor and master supervisor in School of Materials and Metallurgy, Inner Mongolia University of Science and Technology. Young Scientific and Technological Talents of Inner Mongolia Autonomous Region, third-level talents of "New Century 321 Talent Project" of Inner Mongolia Autonomous Region. Graduate thesis evaluation expert of Degree Center of Ministry of Education, evaluation expert of National Natural Science Foundation, young editorial board of China Metallurgy, young editorial board of Nonferrous Equipment, and Contemporary Chemical Research. Steel Research International, Metallurgical and Materials Transactions B, Journal of Iron and Steel Research International and other journal reviewers. He is mainly engaged in the research of the action mechanism of rare earth in steel and the control of non-metallic inclusions in steel. He has published more than 20 high-level papers. He has presided over more than 10 projects such as "National Natural Science Foundation", "Inner Mongolia Natural Science Foundation" and "Inner Mongolia Young Scientific and Technological Talents".
简介：任磊，博士，内蒙古科技大学材料与冶金学院副教授，硕士生导师，内蒙古自治区青年科技英才、内蒙古自治区“新世纪321人才工程”第三层次人才。教育部学位中心研究生论文评审专家、国家自然科学基金评审专家、《中国冶金》青年编委、《有色设备》青年编委、《当代化工研究》编委。《Steel Research International》、《Metallurgical and Materials Transactions B》、《Journal of Iron and Steel Research International》等期刊审稿人。主要从事稀土在钢中的作用机理、钢中非金属夹杂物控制方面的研究工作。发表高水平论文20余篇。主持“国家自然科学基金”、“内蒙古自然科学基金”、“内蒙古青年科技英才”等项目10余项。
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